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PD57006STR-E Datenblatt(PDF) 10 Page - STMicroelectronics

Teilenummer PD57006STR-E
Bauteilbeschribung  RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
PDF  22 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD57006STR-E Datenblatt(HTML) 10 Page - STMicroelectronics

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Typical performance
PD57006-E, PD57006S-E
10/22
Doc ID 12611 Rev 2
Figure 17.
Power gain vs output power
Figure 18.
Drain efficiency vs output power
0
1
2
3
4
5
67
89
Pout, OUTPUT POWER (W)
4
6
8
10
12
14
16
18
Vdd=28V
Idq=70mA
945MHz
960MHz
925MHz
0
1
234
56789
Pout, OUTPUT POWER (W)
10
20
30
40
50
60
Vdd=28V
Idq=70mA
945MHz
960MHz
925MHz
Figure 19.
Output power vs bias current
Figure 20.
Drain efficiency vs bias current
0
100
200
300
400
IDQ, BIAS CURRENT (mA)
0
2
4
6
8
10
Vdd=28V
Pin=22.7dBm
945MHz
960MHz
925MHz
0
100
200
300
400
IDQ, BIAS CURRENT (mA)
10
20
30
40
50
60
Vdd=28V
Pin=22.7dBm
945MHz
960MHz
925MHz



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