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MIC2124YMM Datenblatt(PDF) 14 Page - Micrel Semiconductor |
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MIC2124YMM Datenblatt(HTML) 14 Page - Micrel Semiconductor |
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14 / 24 page ![]() Micrel, Inc. MIC2124 June 2010 14 M9999-060810-D where: D = duty cycle COUT = output capacitance value fSW = switching frequency The voltage rating of the capacitor should be twice the output voltage for a tantalum and 20% greater for aluminum electrolytic or OS-CON. The output capacitor RMS current is calculated below: 12 ΔI I L(PP) (RMS) COUT = (20) The power dissipated in the output capacitor is: OUT OUT OUT C 2 (RMS) C ) DISS(C ESR I P ⋅ = (21) Input Capacitor Selection The input capacitor for the power stage input VHSD should be selected for ripple current rating and voltage rating. Tantalum input capacitors may fail when subjected to high inrush currents, caused by turning the input supply on. A tantalum input capacitor’s voltage rating should be at least two times the maximum input voltage to maximize reliability. Aluminum electrolytic, OS-CON, and multilayer polymer film capacitors can handle the higher inrush currents without voltage de- rating. The input voltage ripple will primarily depend on the input capacitor’s ESR. The peak input current is equal to the peak inductor current, so: IN C L(pk) IN ESR I ΔV ⋅ = (22) The input capacitor must be rated for the input current ripple. The RMS value of input capacitor current is determined at the maximum output current. Assuming the peak-to-peak inductor current ripple is low: D) (1 D I I OUT(MAX) (RMS) CIN − ⋅ ⋅ ≈ (23) The power dissipated in the input capacitor is: IN IN IN C 2 (RMS) C ) DISS(C ESR I P ⋅ = (24) Voltage Setting Components The MIC2124 requires two resistors to set the output voltage as shown in Figure 5. The output voltage is determined by the equation: ) R2 R1 (1 V V REF OUT + ⋅ = (25) where VREF = 0.8V. A typical value of R1 can be between 3kΩ and 10kΩ. If R1 is too large, it may allow noise to be introduced into the voltage feedback loop. If R1 is too small in value, it will decrease the efficiency of the power supply, especially at light loads. Once R1 is selected, R2 can be calculated using: REF OUT REF V V R1 V R2 − ⋅ = (26) Figure 5. Voltage-Divider Configuration External Schottky Diode (Optional) An external freewheeling diode, which is not necessary, is used to keep the inductor current flow continuous while both MOSFETs are turned off. This dead-time prevents current from flowing unimpeded through both MOSFETs and is typically 30ns. The diode conducts twice during each switching cycle. Although the average current through this diode is small, the diode must be able to handle the peak current. SW OUT D(avg) f 30ns 2 I I ⋅ ⋅ ⋅ = (27) The reverse voltage requirement of the diode is: HSD DIODE(rrm) V V = The power dissipated by the Schottky diode is: F D(avg) DIODE V I P × = (28) where VF = forward voltage at the peak diode current. The external Schottky diode is not necessary for the circuit operation since the low-side MOSFET contains a parasitic body diode. The external diode will improve efficiency and decrease the high frequency noise. If the MOSFET body diode is used, it must be rated to handle the peak and average current. The body diode has a relatively slow reverse recovery time and a relatively high forward voltage drop. The power lost in the diode is proportional to the forward voltage drop of the diode. As the high-side MOSFET starts to turn on, the body diode becomes a short circuit for the reverse recovery period, dissipating additional power. The diode recovery and the circuit inductance will cause ringing during the high-side MOSFET turn-on. An external Schottky diode conducts at a lower forward voltage preventing the body diode in the MOSFET from turning on. The lower forward voltage drop dissipates less power than the body diode. The lack of a reverse recovery mechanism in a Schottky diode causes less ringing and less power loss. Depending on the circuit components and operating conditions, an external Schottky diode will give a 0.5% to 1% improvement in efficiency. |
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