BSC080P03LSG datasheet(2/9 Pages) INFINEON

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BSC080P03LS G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - case

R thJC

1.4

K/W

Thermal resistance,

junction - ambient

R thJA

6 cm

2 cooling area1)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250µA

-30

Gate threshold voltage

V GS(th)

V DS=V GS, I D=-250 µA

-2.2

-1.5

-1

Zero gate voltage drain current

I DSS

V DS=-30 V, V GS=0 V,

T j=25 °C

-0.1

-1

µA

V DS=-30 V, V GS=0 V,

T j=125 °C

-10

-100

Gate-source leakage current

I GSS

V GS=-25 V, V DS=0 V

-10

-100

Drain-source on-state resistance

R DS(on)

V GS=-10 V, I D=-30 A

6.1

8.0

Ω

Gate resistance

R G

-4

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-30 A

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Values

2) See Figure 3.

Rev. 1.04

page 2

2010-05-04

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