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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFS4115PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRFS4115PBF Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 10 page  11/11/08 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits GD S Gate Drain Source PD - 96198 IRFS4115PbF IRFSL4115PbF S D G D D S G D2Pak IRFS4115PbF TO-262 IRFSL4115PbF VDSS 150V RDS(on) typ. 10.3m: max. 12.1m : ID (Silicon Limited) 99A c ID (Package Limited) 195A S D G Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case kl ––– 0.4 RθJA Junction-to-Ambient jk ––– 40 °C/W A °C 300 220 See Fig. 14, 15, 22a, 22b, 375 18 Max. 99 70 396 195 -55 to + 175 ± 20 2.5 10lb xin (1.1Nxm) |
Ähnliche Teilenummer - IRFS4115PBF |
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Ähnliche Beschreibung - IRFS4115PBF |
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