| Datenblatt-Suchmaschine für elektronische Bauteile |
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IPW60R099CP Datenblatt(PDF) 6 Page - Infineon Technologies AG |
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IPW60R099CP Datenblatt(HTML) 6 Page - Infineon Technologies AG |
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6 / 11 page ![]() IPW60R099CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=18 A pulsed I F=f(V SD) parameter: V DD parameter: T j 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=11 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 V SD [V] 120 V 400 V 0 2 4 6 8 10 12 0 102030 405060 Q gate [nC] 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C] 0 250 500 750 1000 20 60 100 140 180 T j [°C] Rev. 2.1 page 6 2008-02-19 Please note the new package dimensions arccording to PCN 2009-134-A |
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