H30R1202 datasheet(2/12 Pages) INFINEON

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IHW30N120R2

Soft Switching Series

Power Semiconductors

Rev. 1.5

Dec. 09

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

R th JC

0.38

Diode thermal resistance,

junction – case

R th JC D

0.37

Thermal resistance,

junction – ambient

R th JA

K/W

Electrical Characteristic,

at Tj = 25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Static Characteristic

Collector-emitter breakdown voltage

V (BR )C ES V GE=0V, IC =1mA

1200

Collector-emitter saturation voltage

V CE(sat )

V GE = 15V, IC = 30A

T j=25° C

T j=125° C

T j=175° C

1.65

1.85

2.0

1.8

Diode forward voltage

V F

V GE=0V, I F=30A

T j=25° C

T j=125° C

T j=175° C

1.55

1.7

1.75

1.8

Gate-emitter threshold voltage

V GE(th )

I C =0. 7mA,

V CE= VGE

5.1

5.8

6.4

Zero gate voltage collector current

I CES

V CE= 1200V,

V GE=0V

T j=25° C

T j=175° C

2500

µA

Gate-emitter leakage current

I GES

V CE=0V ,V GE =20V

100

Transconductance

g fs

V CE= 20V, IC= 30A

19.7

Integrated gate resistor

R Gin t

none

Ω

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