| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3133 Datenblatt(PDF) 1 Page - Advanced Semiconductor |
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2SC3133 Datenblatt(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T C = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 25 V BVCBO IC = 5.0 mA 60 V BVEBO IE = 1.0 mA 5.0 V ICBO VCB = 30 V 500 µA IEBO VEB = 4.0 V 500 µA hFE VCE = 12 V IC = 10 mA 10 50 180 --- PO η C VCC = 12 V PIN = 0.5 W f = 27 MHz 13 60 16 70 dB % NPN SILICON RF POWER TRANSISTOR 2SC3133 DESCRIPTION: The ASI 2SC3133 is Designed for RF Power amplifiers in HF band mobile radio Applications. MAXIMUM RATINGS IC 6.0 A VCE 25 V VCB 60 V PDISS 20 W @ TC = 25 °C TSTG -65 °C to +150 °C θ JC 6.25 °C/W PACKAGE STYLE TO-220AB (COMMON EMITTER) 1 = BASE 2 = EMITTER 3 = COLLECTOR TAB = EMITTER |
Ähnliche Teilenummer - 2SC3133 |
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Ähnliche Beschreibung - 2SC3133 |
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