2SC4497 datasheet(1/5 Pages) TOSHIBA

Teilenummer	2SC4497

Bauteilbeschribung	High Voltage Control Applications

PDF	5 Pages

Scroll/Zoom	100%

Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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1 / 5 page

2SC4497

2003-03-27

1

TOSHIBA Transistor

Silicon NPN Triple Diffused Type (PCT process)

2SC4497

High Voltage Control Applications

· High voltage: VCBO = 300 V, VCEO = 300 V

· Low saturation voltage: VCE (sat) = 0.5 V (max)

· Small collector output capacitance: Cob = 3 pF (typ.)

· Complementary to 2SA1721

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

300

V

Collector-emitter voltage

VCEO

300

V

Emitter-base voltage

VEBO

6

V

Collector current

IC

100

mA

Base current

IB

20

mA

Collector power dissipation

PC

200

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

-55~150

°C

Marking

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

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