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STM8L151C4U6 Datenblatt(PDF) 82 Page - STMicroelectronics

Teilenummer STM8L151C4U6
Bauteilbeschribung  8-bit ultralow power MCU, up to 32 KB Flash, 1 KB Data EEPROM RTC, LCD, timers, USART, I2C, SPI, ADC, DAC, comparators
PDF  122 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8L151C4U6 Datenblatt(HTML) 82 Page - STMicroelectronics

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Electrical parameters
STM8L151xx, STM8L152xx
82/122
Doc ID 15962 Rev 5
Internal clock sources
Subject to general operating conditions for VDD, and TA.
High speed internal RC oscillator (HSI)
Figure 19. Typical HSI frequency vs VDD
Table 32.
HSI oscillator characteristics
Symbol
Parameter (1)
Conditions(1)
Min
Typ
Max
Unit
fHSI
Frequency
VDD = 3.0 V
16
MHz
ACCHSI
Accuracy of HSI
oscillator (factory
calibrated)
VDD = 3.0 V, TA = 25 °C
-1 (2)
1 (2)
%
VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C
-1.5 (2)
1.5 (2)
%
VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C
-2 (2)
2 (2)
%
VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C
-2.5 (2)
2(2)
%
VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C
-4.5 (2)
2 (2)
%
1.65 V
≤VDD ≤ 3.6 V,
-40 °C
≤TA ≤ 125 °C
-4.5
3
%
TRIM
HSI user trim
resolution
1.65 V
≤VDD ≤ 3.6 V,
-40 °C
≤TA ≤ 125 °C
±0.4 (2)
±0.5(2)
%
tsu(HSI)
HSI oscillator setup
time (wakeup time)
3.7
7.4 (2)
µs
IDD(HSI)
HSI oscillator power
consumption
100
140 (2)
µA
1.
VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.
2.
Data based on characterization results, not tested in production.



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