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MMST6427 Datenblatt(PDF) 1 Page - Diodes Incorporated |
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MMST6427 Datenblatt(HTML) 1 Page - Diodes Incorporated |
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1 / 3 page ![]() MMST6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • High Current Gain • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • "Green" Device (Note 3 and 4) Mechanical Data • Case: SOT-323 • Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Marking Information: K1D - See Page 3 • Ordering & Date Code Information: See Page 3 • Weight: 0.006 grams (approximate) SOT-323 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 α 0 ° 8 ° All Dimens mm ions in E B C A M J L E D B C H K G BE C Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 12 V Collector Current - Continuous (Note 1) IC 500 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 625 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V(BR)CBO 40 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 100mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 12 ⎯ V IE = 10μA, IC = 0 Collector Cutoff Current ICBO ⎯ 50 nA VCB = 30V, IE = 0 Collector Cutoff Current ICEO ⎯ 1.0 μA VCE = 25V, IB = 0 Emitter Cutoff Current IEBO ⎯ 50 nA VEB = 10V, IC = 0 ON CHARACTERISTICS (Note 5) DC Current Gain hFE 10,000 20,000 14,000 100,000 200,000 140,000 ⎯ IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 500mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 1.2 1.5 V IC = 50mA, IB = 0.5mA IC = 500mA, IB = 0.5mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ 2.0 V IC = 500mA, IB = 0.5mA Base-Emitter On Voltage VBE(ON) ⎯ 1.75 V IC = 50mA, VCE =5.0V SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 8.0 Typical pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 15 Typical pF VEB = 0.5V, f = 1.0MHz, IC = 0 Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. Short duration pulse test used to minimize self-heating effect. DS30166 Rev. 10 - 2 1 of 3 www.diodes.com MMST6427 © Diodes Incorporated |
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