 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
DMN601DMK Datenblatt(PDF) 1 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMN601DMK Datenblatt(HTML) 1 Page - Diodes Incorporated |
|
|
1 / 4 page  DMN601DMK Document number: DS30657 Rev. 4 - 2 1 of 4 www.diodes.com December 2007 © Diodes Incorporated DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • "Green" Device (Note 4) Mechanical Data • Case: SOT-26 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.015 grams (approximate) SOT-26 TOP VIEW Internal Schematic TOP VIEW Source Body Diode Gate Protection Diode Gate Drain S 1 D 1 D 2 S 2 G 1 G 2 ESD protected up to 2kV Equivalent Circuit Per Element Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units VDSS 60 V Drain-Source Voltage Gate-Source Voltage VGSS ±20 V Continuous Pulsed (Note 3) ID 305 800 mA Drain Current (Note 1) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Pd 225 mW Total Power Dissipation (Note 1) RθJA 556 °C/W Thermal Resistance, Junction to Ambient Tj, TSTG -65 to +150 °C Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA VGS = 10V, ID = 200mA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ 2.4 4.0 Ω VGS = 4V, ID = 200mA Forward Transfer Admittance |Yfs| 100 ⎯ ⎯ ms VDS =10V, ID = 200mA Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.4 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 50 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5.0 pF VDS = 25V, VGS = 0V f = 1.0MHz Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. Please click here to visit our online spice models database. |
Ähnliche Teilenummer - DMN601DMK |
|
Ähnliche Beschreibung - DMN601DMK |
|
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
