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DNLS320E Datenblatt(PDF) 2 Page - Diodes Incorporated

Teilenummer DNLS320E
Bauteilbeschribung  LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DNLS320E Datenblatt(HTML) 2 Page - Diodes Incorporated

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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Off Characteristics
Collector-Base Breakdown Voltage
V(BR)CBO
20
⎯
⎯
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
20
⎯
⎯
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5
⎯
⎯
V
IE = 100μA, IC = 0
Collector Cutoff Current
ICBO
⎯
⎯
100
nA
VCB = 16V, IE = 0
Emitter Cutoff Current
IEBO
⎯
⎯
100
nA
VEB = 4V, IC = 0
On Characteristics (Note 4)
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
⎯
0.04
0.18
0.24
0.10
0.50
0.45
V
IC = 0.1A, IB = 0.5mA
IC = 2A, IB = 10mA
IC = 3A, IB = 20mA
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
⎯
0.9
V
IC = 1A, IB = 10mA
Base-Emitter Turn-On Voltage
VBE(ON)
⎯
⎯
0.9
V
VCE = 2V, IC = 1A
DC Current Gain
hFE
500
400
150
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 2A
VCE = 2V, IC = 6A
AC Characteristics
Transition Frequency
fT
150
⎯
⎯
MHz
VCE = 5V, IC = 50mA, f = 50MHz
Input Capacitance
Cibo
⎯
230
⎯
pF
VEB = 0.5V, f = 1MHz
Output Capacitance
Cobo
⎯
23
⎯
pF
VCB = 10V, f = 1MHz
Switching Times
ton
toff
⎯
⎯
26
220
⎯
⎯
ns
ns
VCC = 10V, IC = 500mA
IB1 = -IB2 = 50mA
Notes:
4. Pulse Test: Pulse width
≤300μs. Duty cycle ≤2.0%.
0
0.2
0.4
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
0.6
0.8
1.0
0
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
01
2
3
4
5
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
DS31326 Rev. 3 - 2
2 of 4
www.diodes.com
DNLS320E
© Diodes Incorporated



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