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DNLS160 Datenblatt(PDF) 2 Page - Diodes Incorporated

Teilenummer DNLS160
Bauteilbeschribung  LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DNLS160 Datenblatt(HTML) 2 Page - Diodes Incorporated

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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
80
⎯
⎯
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
60
⎯
⎯
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5
⎯
⎯
V
IE = 100μA, IC = 0
Collector Cutoff Current
ICBO
⎯
⎯
100
50
nA
μA
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
Collector Cutoff Current
ICES
⎯
⎯
100
nA
VCE = 60V, VBE = 0
Emitter Cutoff Current
IEBO
⎯
⎯
100
nA
VEB = 5V, IC = 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
250
200
100
320
280
165
⎯
⎯
⎯
V
VCE = 5V, IC = 1mA
VCE = 5V, IC = 500mA
VCE = 5V, IC = 1A
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
⎯
80
80
140
110
140
250
mV
IC = 100mA, IB = 1mA
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
Collector-Emitter Saturation Resistance
RCE(SAT)
⎯
140
250
m
Ω
IC = 1A, IB = 100mA
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
0.91
1.1
V
IC = 1A, IB = 50mA
Base-Emitter Turn On Voltage
VBE(ON)
⎯
0.81
0.9
V
VCE = 5V, IC = 1A
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
7
10
pF
VCB = 10V, f = 1.0MHz
Current Gain-Bandwidth Product
fT
150
270
⎯
MHz
VCE = 10V, IC = 50mA, f = 100MHz
Notes:
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
0
50
100
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
A
150
200
250
300
0
Fig. 2 Typical Collector Current vs.
Collector-Emitter Voltage
DS31390 Rev. 3 - 2
2 of 4
www.diodes.com
DNLS160
© Diodes Incorporated



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