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2DB1697 Datenblatt(PDF) 1 Page - Diodes Incorporated

Teilenummer 2DB1697
Bauteilbeschribung  LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

2DB1697 Datenblatt(HTML) 1 Page - Diodes Incorporated

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2DB1697
Document number: DS31618 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DB1697
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Complementary NPN Type Available (2DD2661)
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
•
Case: SOT89-3L
•
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.072 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-15
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-4
A
Continuous Collector Current
IC
-2
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 3) @ TA = 25°C
PD
0.9
W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
RθJA
139
°C/W
Power Dissipation (Note 4) @ TA = 25°C
PD
2
W
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
RθJA
62.5
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(BR)CBO
-15
⎯
⎯
V
IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 5)
V(BR)CEO
-12
⎯
⎯
V
IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
⎯
⎯
V
IE = -10μA, IC = 0
Collector Cut-Off Current
ICBO
⎯
⎯
-0.1
μA
VCB = -15V, IE = 0
Emitter Cut-Off Current
IEBO
⎯
⎯
-0.1
μA
VEB = -6V, IC = 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-65
-180
mV
IC = -1A, IB = -50mA
DC Current Gain
hFE
270
⎯
680
⎯
VCE = -2V, IC = -200mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
40
⎯
pF
VCB = -10V, IE = 0,
f = 1MHz
Current Gain-Bandwidth Product
fT
⎯
140
⎯
MHz
VCE = -2V, IC = -100mA,
f = 100MHz
Notes:
1.
No purposefully added lead.
2.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3.
Device mounted on FR-4 PCB with minimum recommended pad layout.
4.
Device mounted on FR-4 PCB with 1 inch
2 copper pad layout.
5.
Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
Top View
Device Schematic
Pin Out Configuration
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C
C
B
E
TOP VIEW
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