TLV62065 datasheet(4/26 Pages) TI

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TLV62065

SLVSAC4 – NOVEMBER 2010

www.ti.com

ELECTRICAL CHARACTERISTICS

Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply

for condition VIN = EN = 3.6V. External components CIN = 10mF 0603, COUT = 10mF 0603, L = 1.0mH, see the parameter

measurement information.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY

VIN

Input voltage range

2.9

5.5

IOUT = 0 mA, device operating in PFM mode

Operating quiescent current

and not device not switching

ISD

Shutdown current

EN = GND, current into AVIN and PVIN combined

0.1

Falling

1.73

1.78

1.83

VUVLO

Undervoltage lockout threshold

Rising

1.9

1.95

1.99

ENABLE, MODE

VIH

High level input voltage

2.9V

≤ VIN ≤ 5.5V

1.0

5.5

VIL

Low level input voltage

2.9V

≤ VIN ≤ 5.5V

0.4

IIN

Input bias current

EN, Mode tied to GND or AVIN

0.01

POWER SWITCH

VIN = 3.6V

(1)

120

180

RDS(on)

High-side MOSFET on-resistance

Ω

VIN = 5.0V

(1)

150

VIN = 3.6V

(1)

130

RDS(on)

Low-side MOSFET on-resistance

VIN = 5.0V

(1)

100

Forward current limit MOSFET

ILIMF

≤ VIN ≤ 3.6V

2300

2750

high-side and low-side

Thermal shutdown

Increasing junction temperature

150

TSD

°C

Thermal shutdown hysteresis

Decreasing junction temperature

OSCILLATOR

fSW

Oscillator frequency

2.9V

≤ VIN ≤ 5.5V

2.6

3.4

MHz

OUTPUT

Vref

Reference voltage

600

PWM operation, MODE = VIN ,

VFB(PWM)

Feedback voltage PWM Mode

–2.0

2.0

2.9V

≤ VIN ≤ 5.5V, 0 mA load

Feedback voltage PFM mode,

device in PFM mode, voltage positioning active(2)

VFB(PFM)

Voltage Positioning

Load regulation

-0.5

%/A

VFB

Line regulation

%/V

Activated with EN = GND, 2.9V

≤ VIN≤ 5.5V, 0.8 ≤

200

R(Discharge)

Internal discharge resistor

VOUT≤ 3.6V

tSTART

Start-up time

Time from active EN to reach 95% of VOUT

500

(1)

Maximum value applies for TJ = 85°C

(2)

In PFM mode, the internal reference voltage is set to typ. 1.01×Vref. See the parameter measurement information.

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