FCX705 datasheet(3/5 Pages) DIODES

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FCX705

SEMICO NDUC TORS

ISSUE 4 - DECEMBER 2002

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

-140

IC= -100 A

Collector-Emitter Breakdown

Voltage

V(BR)CEO

-120

IC= -10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO

-10

IE= -100 A

Collector Cut-Off Current

ICBO

-100

-10

µA

VCB = -10V

VCB = -120V

Tamb = 100°C

Emitter Cut-Off Current

IEBO

-0.1

µA

VEB= -8V

Collector Emitter Cut-Off Current

ICES

-10

µA

VCES= -120V

Collector-Emitter Saturation

Voltage

VCE(sat)

-1.3

-2.5

IC= -1A, IB= -1mA*

IC= -2A, IB= -2mA*

Base-Emitter Saturation Voltage

VBE(sat)

-1.8

IC= -1A, IB= -1mA*

Base-Emitter Turn-On Voltage

VBE(on)

-1.7

IC= -1A, VCE= -5V*

Static Forward Current Transfer

Ratio

hFE

30K

IC= -10mA, VCE= -5V*

IC= -100mA, VCE= -5V*

IC= -1A, VCE= -5V*

IC= -2A, VCE= -5V*

Transition Frequency

160

MHz

IC= -100mA, VCE= -10V

f= 20MHz

Input Capacitance

Cibo

VCB= -500mV, f= 1MHz

Output Capacitance

Cobo

VCB= -10V, f= 1MHz

Turn-On Time

t(on)

0.6

µs

IC= -500mA, VCE= -10V

IB1=IB2= -0.5mA

Turn-Off Time

t(off)

0.8

µs

IC= -500mA, VCE= -10V

IB1=IB2= -0.5mA

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

Nb. Spice parameter data is available upon request for this device.

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

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