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FMMT491 Datenblatt(PDF) 4 Page - Diodes Incorporated

Teilenummer FMMT491
Bauteilbeschribung  Medium power NPN transistor in SOT23
PDF  8 Pages
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Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT491 Datenblatt(HTML) 4 Page - Diodes Incorporated

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FMMT491
Issue 5 - November 2007
4
www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BVCBO
80
V
IC = 100 A
Collector-emitter
breakdown voltage
BVCEO
60
V
IC = 10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
Emitter-base breakdown
voltage
BVEBO
78.1
V
IE = 100 A
Collector cut-off current
ICBO
<1
100
nA
VCB = 60V
Collector – emitter current
cut-off current
ICES
<1
100
nA
Emitter cut-off current
IEBO
<1
100
nA
VEB = 5.6V
Collector-emitter
saturation voltage
VCE(sat)
100
150
mV
IC = 0.5A, IB = 50mA(*)
160
250
mV
IC = 1A, IB = 100mA(*)
Base-emitter saturation
voltage
VBE(sat)
965
1100
mV
IC = 1A, IB = 100mA(*)
Base-emitter turn-on
voltage
VBE(on)
830
1000
mV
IC = 1A, VCE = 5V(*)
Static forward current
transfer ratio
hFE
100
140
IC = 1mA, VCE = 5V(*)
100
150
300
IC = 500mA, VCE = 5V(*)
80
120
IC = 1A, VCE = 5V
30
40
IC = 2A, VCE = 5V
Transition frequency
fT
150
MHz
IC = 50mA, VCE = 10V
f = 100MHz
Output capacitance
COBO
10
pF
VCB = -10V, f = 1MHz(*)



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