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FMMT720 Datenblatt(PDF) 3 Page - Diodes Incorporated

Teilenummer FMMT720
Bauteilbeschribung  SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS
PDF  4 Pages
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Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT720 Datenblatt(HTML) 3 Page - Diodes Incorporated

  FMMT720 Datasheet HTML 1Page - Diodes Incorporated FMMT720 Datasheet HTML 2Page - Diodes Incorporated FMMT720 Datasheet HTML 3Page - Diodes Incorporated FMMT720 Datasheet HTML 4Page - Diodes Incorporated  
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-55°C
100°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I+/I*=10
Collector Current
Collector Current
Collector Current
25°C
100°C
-55°C
25°C
100°C
-55°C
I+/I*=10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V+-=2V
0
450
225
25°C
100°C
-55°C
V+-=2V
0.2
0.0
1.0
0.8
0.6
0.4
SINGLE PULSE TEST Tamb = 25 deg C
VCE (VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
100A
1mA
10mA
100mA
1A
10A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10A
1A
100mA
10mA
1mA
100A
1.4
1.6
1mA
10mA
100mA
1A
10A
100A
1.2
1mA
10mA
100A
100mA
1A
10A
1.4
1.6
0.1
1.0
10
100
0.01
0.1
1.0
10
D.C.
1s
100ms
10ms
1ms
100µs
VCE(SAT) vs IC
VCE(SAT) vs IC
VBE(SAT) vs IC
hFE vs IC
VBE(ON) vs IC
10m
100m
1
+25°C
1m
1m
10m
100m
1
10
Collector Current (A)
I+/I*=100
I+/I*=50
I+/I*=30
I+/I*=10
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-12
-35
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-12
-25
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
-8.5
V
IE=-100µA
Collector Cut-Off
Current
ICBO
-100
nA
VCB=-10V
Emitter Cut-Off Current IEBO
-100
nA
VEB=-4V
Collector Emitter
Cut-Off Current
ICES
-100
nA
VCES=-10V
Collector-Emitter
Saturation Voltage
VCE(sat)
-10
-100
-110
-180
-17
-140
-170
-220
mV
mV
mV
mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-10mA*
IC=-1.5A, IB=-50mA*
IC=-2.5A, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
-1.0
V
IC=-2.5A, IB=-50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-0.8
-1.0
V
IC=-2.5A, VCE=-2V*
Static Forward Current
Transfer
Ratio
hFE
300
300
180
60
45
475
450
275
100
70
IC=-10mA, VCE=-2V*
IC=-100mA, VCE=-2V*
IC=-2.5A, VCE=-2V*
IC=-8A, VCE=-2V*
IC=-10A, VCE=-2V*
Transition
Frequency
fT
80
110
MHz
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
21
30
pF
VCB=-10V, f=1MHz
Turn-On Time
t(on)
70
ns
VCC=-6V, IC=-2A
IB1=IB2=50mA
Turn-Off Time
t(off)
130
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT717
FMMT717
3 - 160
3 - 161



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