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PJP830 Datenblatt(PDF) 3 Page - Pan Jit International Inc.

Teilenummer PJP830
Bauteilbeschribung  500V N-Channel Enhancement Mode MOSFET
PDF  6 Pages
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Hersteller  PANJIT [Pan Jit International Inc.]
Direct Link  http://www.panjit.com.tw
Logo PANJIT - Pan Jit International Inc.

PJP830 Datenblatt(HTML) 3 Page - Pan Jit International Inc.

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PJP830 / PJF830
Typical Characteristics Curves ( Ta=25
℃
℃
℃
℃, unless otherwise noted)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
V
DS - Drain-to-Source Voltage (V)
V
GS= 20V~ 7.0V
5.0V
6.0V
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
2
4
6
8
10
I
D - Drain Current (A)
V
GS = 20V
V
GS=10V
1
1.2
1.4
1.6
1.8
2
2
4
6
8
10
V
GS - Gate-to-Source Voltage (V)
I
D =2.5A
T
J =25
oC
0.1
1
10
2
3
4
5
6
7
8
V
GS - Gate-to-Source Voltage (V)
V
DS =50V
T
J = 125
oC
25oC
-55oC
PJP830 / PJF830
Typical Characteristics Curves ( Ta=25
℃
℃
℃
℃, unless otherwise noted)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
STAD-JAN.08.2010
Fig.5 On Resistance vs Junction Temperature
Fig.6 Capacitance
PAGE. 3
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
V
DS - Drain-to-Source Voltage (V)
V
GS= 20V~ 7.0V
5.0V
6.0V
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
2
4
6
8
10
I
D - Drain Current (A)
V
GS = 20V
V
GS=10V
0
200
400
600
800
1000
0
5
10
15
20
25
30
V
DS - Drain-to-Source Voltage (V)
Ciss
Coss
Crss
f = 1MHz
V
GS = 0V
1
1.2
1.4
1.6
1.8
2
2
4
6
8
10
V
GS - Gate-to-Source Voltage (V)
I
D =2.5A
T
J =25
oC
0.5
0.9
1.3
1.7
2.1
2.5
2.9
-50
-25
0
25
50
75
100
125
150
T
J - Junction Temperature (
oC)
V
GS =10 V
I
D =2.5A
0.1
1
10
2
3
4
5
6
7
8
V
GS - Gate-to-Source Voltage (V)
V
DS =50V
T
J = 125
oC
25oC
-55oC



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