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ZXTP2025F Datenblatt(PDF) 4 Page - Diodes Incorporated

Teilenummer ZXTP2025F
Bauteilbeschribung  50V, SOT23, PNP medium power transistor
PDF  6 Pages
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Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP2025F Datenblatt(HTML) 4 Page - Diodes Incorporated

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ZXTP2025F
Issue 3 - January 2006
4
www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V(BR)CBO
-50
100
V
IC=-100µA
Collector-emitter breakdown
voltage
V(BR)CEO
-50
70
V
IC=-10mA
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle
2%.
Emitter-base breakdown
voltage
V(BR)EBO
-7.0
8.5
V
IE=-100µA
Collector-emitter cut-off
current
ICEV
-20
nA
VCE=-40V,
VBE = 1V
Collector-base cut-off current
ICBO
-20
nA
VCB=-40V
Emitter-base cut-off current
IEBO
-10
nA
VEB=-6V
Static forward current transfer
ratio
HFE
180
200
70
12
380
350
120
30
560
IC=-10mA, VCE=-2V
(a)
IC=-500mA, VCE=-2V
(a)
Ic=-5A, VCE=-2V
(a)
Ic=-10A, VCE=-2V
(a)
Collector-emitter saturation
voltage
VCE(sat)
-11
-40
-150
-150
-20
-60
-230
-200
mV
mV
mV
mV
IC=-100mA, IB=-10mA
(a)
IC=-1A, IB=-100mA
(a)
IC=-2A, IB=-40mA
(a)
IC=-5A, IB=-500mA
(a)
Base-emitter saturation
voltage
VBE(sat)
-0.81
-0.95
-0.88
-1.05
V
V
IC=-2A, IB=-40mA
(a)
IC=-5A, IB=-500mA
(a)
Base-emitter turn-on voltage
VBE(on)
-0.82
-0.92
V
IC=-5A, VCE=-2V
(a)
Transition frequency
fT
190
MHz
Ic=-500mA, VCE=-10V,
f=50MHz
Output capacitance
Cobo
42
pF
VCB=-10V, f=1MHz
Delay time
t(d)
14
ns
Rise time
t(r)
23
ns
VCC=-12V, IC=-2.5A,
Storage time
t(stg)
240
ns
IB1=IB2=-125mA
Fall time
t(f)
30
ns



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