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2SJ669 Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer 2SJ669
Bauteilbeschribung  Relay Drive, DC/DC Converter and Motor Drive
PDF  6 Pages
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ669 Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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2SJ669
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = −60 V, VGS = 0 V
−100
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−60
V
Drain−source breakdown voltage
V (BR) DSX
ID = −10 mA, VGS = 20 V
−35
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−0.8
−2.0
V
VGS = −4 V, ID = −2.5 A
0.16
0.25
Drain−source ON-resistance
RDS (ON)
VGS = −10 V, ID = −2.5 A
0.12
0.17
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −2.5 A
2.5
5.0
S
Input capacitance
Ciss
700
Reverse transfer capacitance
Crss
60
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
90
pF
tr
tr
14
ton
ton
24
tf
tf
14
Switching time
toff
toff
95
ns
Total gate charge (gate−source
plus gate−drain)
Qg
15
Gate−source charge
Qgs
11
Gate−drain (“Miller”) charge
Qgd
VDD ≈ −48 V, VGS = −10 V, ID = −5 A
4
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
−5
A
Pulse drain reverse current
(Note 1)
IDRP
−20
A
Forward voltage (diode)
VDSF
IDR = −5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
40
ns
Reverse recovery charge
Qrr
IDR = −5 A, VGS = 0 V
dlDR / dt = 50 A / μs
32
nC
Marking
J669
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Duty
≤ 1%, tw = 10 μs
−10 V
0 V
VGS
RL = 12 Ω
VDD ∼− −30 V
ID = −2.5 A
Output



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