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2SJ669 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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2SJ669 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() 2SJ669 2009-09-29 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = −60 V, VGS = 0 V — — −100 μA V (BR) DSS ID = −10 mA, VGS = 0 V −60 — — V Drain−source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −35 — — V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V VGS = −4 V, ID = −2.5 A — 0.16 0.25 Drain−source ON-resistance RDS (ON) VGS = −10 V, ID = −2.5 A — 0.12 0.17 Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 2.5 5.0 — S Input capacitance Ciss — 700 — Reverse transfer capacitance Crss — 60 — Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz — 90 — pF tr tr — 14 — ton ton — 24 — tf tf — 14 — Switching time toff toff — 95 — ns Total gate charge (gate−source plus gate−drain) Qg — 15 — Gate−source charge Qgs — 11 — Gate−drain (“Miller”) charge Qgd VDD ≈ −48 V, VGS = −10 V, ID = −5 A — 4 — nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −5 A Pulse drain reverse current (Note 1) IDRP — — — −20 A Forward voltage (diode) VDSF IDR = −5 A, VGS = 0 V — — 1.7 V Reverse recovery time trr — 40 — ns Reverse recovery charge Qrr IDR = −5 A, VGS = 0 V dlDR / dt = 50 A / μs — 32 — nC Marking J669 Lot No. Note 4 Part No. (or abbreviation code) Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Duty ≤ 1%, tw = 10 μs −10 V 0 V VGS RL = 12 Ω VDD ∼− −30 V ID = −2.5 A Output |
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