ZXCT1109 datasheet(4/17 Pages) DIODES

4 / 17 page

ZXCT1107/1109/1110

LOW POWER HIGH-SIDE CURRENT MONITORS

ZXCT1107/1109/1110

Document number: DS35033 Rev. 1 - 2

4 of 17

www.diodes.com

MARCH 2011

A Product Line of

Diodes Incorporated

Electrical Characteristics (TA = 25°C, VS+ = 20V, VSENSE

5 = 100mV, R

GAIN = 0 unless otherwise stated) (cont.)

ZXCT1110

Symbol

Parameter

Conditions

Min

Typ

Max

Units

GND pin current

VSENSE

5 = 0V

25°C

µA

-40°C

2.2

125°C

5.8

IS-

S- input current

25°C

100

-40°C

125°C

CMSR

Common-Mode Sense rejection

VS+ = 2.5V to 36V

25°C

0.1

0.4

µA/V

-40°C

0.13

125°C

0.05

IOO

Output Offset current

6,7

VSENSE

5 = 10mV

25°C

±4

µA

-40°C

-1.8

125°C

+2.5

Transconductance

VSENSE

5 = 10mV to

150mV

25°C

3.928

4.072

mA/V

-40°C

3.9

125°C

4.08

Transconductance error

VSENSE

5 = 10mV to

150mV

25°C

-1.8

1.8

IOUT GT-TC

Transconductance temp.co

25°C

265

ppm/ºC

VOUTH

Output relative to VS-

25°C

-1

-0.78

-40°C

-0.88

125°C

-0.63

-3dB Small Signal Bandwidth

VSENSE

(AC) = 10mVPP,

RGAIN = 2.5kΩ

25°C

0.65

MHz

Notes.

5. VSENSE = “VSENSE+” – “VSENSE-“

6. Output current characteristic measured with low impedance ammeter connected to GND

7. Defined as difference between actual output current and 40 µA; measured at VSENSE =10mV. This will include an error due to bias

currents of the device.

8. For VSENSE > 10mV, the internal voltage-current converter is fully linear. This enables a true offset to be defined and used.

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