AML2002 datasheet(2/4 Pages) SANYO

Teilenummer	AML2002

Bauteilbeschribung	NPN Epitaxial Planar Silicon Transistor LED Back Light

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Hersteller	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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2 / 4 page

AML2002

No. A1837-2/4

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=100V, IE=0A

1

μA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

1

μA

DC Current Gain

hFE

VCE=5V, IC=100mA

200

560

Gain-Bandwidth Product

fT

VCE=10V, IC=100mA

120

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

9

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=0.35A, IB=35mA

125

220

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=0.35A, IB=35mA

0.82

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10μA, IE=0A

220

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

200

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10μA, IC=0A

8

V

Turn-On Time

ton

See speciﬁed Test Circuit.

50

ns

Storage Time

tstg

See speciﬁed Test Circuit.

2

μs

Fall Time

tf

See speciﬁed Test Circuit.

70

ns

Switching Time Test Circuit

RB

VCC=100V

IC=10IB1= --10IB2=0.3A

+

50Ω

INPUT

OUTPUT

RL

820μF

PW=50μs

IB1

D.C.≤1%

IB2

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VCE

hFE -- IC

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- A

IT15964

0

1.0

0.2

0.1

0.4

0.3

0.6

0.5

0.8

0.9

0.7

0

0.1

0.7

0.6

0.5

0.4

0.3

0.2

0.8

0.9

1.0

IB=0mA

2mA

4mA

6mA

8mA

10mA

20mA

30mA

40mA

50mA

60mA

80mA

IT15965

010

1

456789

3

2

0

0.02

0.14

0.12

0.10

0.08

0.06

0.04

0.16

0.18

0.20

IB=0μA

200

μA

100

μA

300

μA

400

μA

500

μA

100mA

600

μA

700

μA

IT15967

2

10

100

1.0

3

5

7

2

3

5

7

1000

2

3

5

7

0.01

3

25

0.1

1.0

73

25

7

Ta=75

°C

25

°C

VCE=5V

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

IT15966

0.4

0.3

0.1

0.2

0.9

0.8

0.7

0.6

0.5

1.0

VCE=5V

--25

°C

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