CMOS LSI

Ordering number : EN*5129A

D3096HA (OT)/N3095HA (OT) No. 5129-1/14

Preliminary

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

1MEG (131072 words

× 8 bits) Flash Memory

LE28C1001M, T-90/12/15

Overview

The LE28C1001M, T series ICs are 1 MEG flash memory

products that feature a 131072-word

× 8-bit organization

and 5 V single-voltage power supply operation. CMOS

peripheral circuits are adopted for high speed, low power

dissipation, and ease of use. A 128-byte page rewrite

function provides rapid data rewriting.

Features

• Highly reliable 2-layer polysilicon CMOS flash

EEPROM process

• Read and write operations using a 5 V single-voltage

power supply

• Fast access time: 90, 120, and 150 ns

• Low power dissipation

— Operating current (read): 30 mA (maximum)

— Standby current:

20 µA (maximum)

• Highly reliable read/write

— Erase/write cycles:

— Data retention:

10 years

• Address and data latches

• Fast page rewrite operation

— 128 bytes per page

— Byte/page rewrite time:

5 ms (typical)

— Chip rewrite time:

5 s (typical)

• Automatic rewriting using internally generated Vpp

• Rewrite complete detection function

— Toggle bit

— Data polling

• Hardware and software data protection functions

• All inputs and outputs are TTL compatible.

• Pin assignment conforms to the JEDEC byte-wide

EEPROM standard.

• Package

SOP 32-pin (525 mil) plastic package :

LE28C1001M

TSOP 32-pin (8

× 20 mm)plastic package : LE28C1001T

Package Dimensions

unit: mm

3205-SOP32

unit: mm

3224-TSOP32

SANYO: TSOP32 (TYPE-I)

[LE28C1001T]

These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.

[LE28C1001M]

SANYO: SOP32