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2SC1384 Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 2SC1384
Bauteilbeschribung  NPN SILICON TRANSISTOR
PDF  5 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC1384 Datenblatt(HTML) 2 Page - Unisonic Technologies

  2SC1384 Datasheet HTML 1Page - Unisonic Technologies 2SC1384 Datasheet HTML 2Page - Unisonic Technologies 2SC1384 Datasheet HTML 3Page - Unisonic Technologies 2SC1384 Datasheet HTML 4Page - Unisonic Technologies 2SC1384 Datasheet HTML 5Page - Unisonic Technologies  
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2SC1384
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R211-005.C
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Peak Collector Current
ICP
1.5
A
Collector Current (DC)
IC
1
A
Collector Dissipation (Ta=25℃)
PC
1000
mW
Junction Temperature
TJ
125
℃
Operating Temperature
TOPR
-20 ~ +85
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=10μA, IE=0
60
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=2mA, IB=0
50
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10μA, IC=0
5
V
Collector Cut-Off Current
ICBO
VCB=20V, IE=0
0.1
μA
hFE1
VCE=10V, IC=500mA
85
160
340
DC Current Gain
hFE2
VCE=5V, IB=1A
50
100
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=0.5A, IB=50mA
0.2
0.4
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=0.5A, IB=50mA
0.85
1.2
V
Current Gain Bandwidth Product
fT
VCE=10V, IB=50mA
200
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
11
20
pF
CLASSIFICATION OF hFE
RANK
Q
R
S
RANGE
85-170
120-240
170-340



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