2SD1802_2 datasheet(1/4 Pages) UTC

Teilenummer	2SD1802

Bauteilbeschribung	HIGH CURRENT SWITCHING APPLICATION

PDF	4 Pages

Scroll/Zoom	100%

Hersteller	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

1

QW-R209-001,A

HIGH CURRENT SWITCHING

APPLICATION

DESCRIPTION

The UTC 2SD1802 applies to voltage regulators, relay

drivers, lamp drivers, and electrical equipment.

FEATURES

*Adoption of FBET, MBIT processes

*Large current capacity and wide ASO

*Low collector-to-emitter saturation voltage

*Fast switching speed

TO-252

1

1: BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

6

V

Collector Power Dissipation

Tc=25

°C

Pc

1

15

W

Collector Current(DC)

Ic

3

A

Collector Current(PULSE)

Icp

6

A

Junction Temperature

Tj

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cutoff Current

ICBO

VCB=40V,IE=0

1

µA

Emitter Cutoff Current

IEBO

VEB=4V,IC=0

1

µA

DC Current Gain (note)

hFE1

hFE2

VCE=2V, Ic=100mA

VCE=2V, Ic=3A

100

35

560

Gain-Bandwidth Product

fT

VCE=10V,IC=50mA

150

MHz

Output Capacitance

Cob

VCB=10V,f=1MHz

25

pF

C-E Saturation Voltage

VCE(sat)

IC=2A,IB=100mA

0.19

0.5

V

B-E Saturation Voltage

VBE(sat)

IC=2A,IB=100mA

0.94

1.2

V

C-B Breakdown Voltage

V(BR)CBO

IC=10µA,IE=0

60

V

C-E Breakdown Voltage

V(BR)CEO

IC=1mA,RBE=∞

50

V

E-B Breakdown Voltage

V(BR)EBO

IE=10µA,IC=0

6

V

Turn-on Time

ton

See test circuit

70

ns

Ähnliche Beschreibung - 2SD1802_2

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2SD1802 Datenblatt(PDF) 1 Page - Unisonic Technologies

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