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80N08L-TA3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 80N08L-TA3-R
Bauteilbeschribung  N-CHANNEL 80V (D-S) MOSFET
PDF  3 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

80N08L-TA3-R Datenblatt(HTML) 2 Page - Unisonic Technologies

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80N08
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-468.a
ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
RATINGS
UNIT
TC=25 °C, VGS=10 V
80
Continuous Drain Current (Note 1)
ID
TC=100 °C, VGS=10 V (Note 2)
80
A
Pulsed Drain Current (Note 2)
ID,pulse
TC=25 °C
320
A
Avalanche Energy, Single Pulse (Note 2)
EAS
ID=80A
810
mJ
Gate Source Voltage (Note 3)
VGS
±20
V
Power Dissipation
PTOT
TC=25 °C
300
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62
K/W
Junction to Case
θJC
0.5
K/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=1mA, VGS=0V
80
V
VDS=75V, VGS=0V, TJ=25°C
0.01
1
Drain-Source Leakage Current
IDSS
VDS=75V, VGS=0V, TJ=125°C
2
1
100
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=20V
1
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.1
3.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=80A
12
mΩ
DYNAMIC PARAMETERS
(Note 2)
Input Capacitance
CISS
4700
pF
Output Capacitance
COSS
1260
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
580
pF
SWITCHING PARAMETERS
(Note 2)
Gate to Source Charge
QGS
25
37
nC
Gate to Drain Charge
QGD
69
116
nC
Total Gate Charge
QG
VDD=60V, VGS=0~10V, ID=80A
144
180
nC
Gate Plateau Voltage
Vplateau
5.4
V
Turn-ON Delay Time
tD(ON)
26
ns
Rise Time
tR
50
ns
Turn-OFF Delay Time
tD(OFF)
61
ns
Fall-Time
tF
VDD=40V, RG=2.2Ω
ID=80A, VGS=10V
30
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
80
Pulsed Current
IS, pulse
TC=25°C (Note 2)
320
A
Drain-Source Diode Forward Voltage (Note1)
VSD
IF=80A, VGS=0V, TJ=25°C
0.9
1.3
V
Reverse Recovery Time (Note 2)
tRR
110
140
ns
Reverse Recovery Charge (Note 2)
QRR
IF= IS, dIF/dt=100A/µs
VR=40V
470
590
nC
Note: 1. Current is limited by bondwire; with an θJC= 0.5K/W the chip is able to carry 132A at 25°C.
2. Defined by design. Not subject to production test.
3. Qualified at -20V and +20V.



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