| Datenblatt-Suchmaschine für elektronische Bauteile |
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BC808L-X-AE3-R Datenblatt(PDF) 3 Page - Unisonic Technologies |
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BC808L-X-AE3-R Datenblatt(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() BC807/BC808 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R206-026,D TYPICAL CHARACTERISTICS -0.1 -10 -1 -1000 1 100 1000 DC Current Gain Collector Current, IC(mA) 10 -0.01 -0.1 -1 -10 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Current, IC(mA) -100 VCE=-2.0V PULSE VCE=-1.0V -0.1 -10 -1 -1000 -100 VCE(SAT) VBE(SAT) IC=10IB PULSE |
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