| Datenblatt-Suchmaschine für elektronische Bauteile |
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IXFN64N60P Datenblatt(PDF) 4 Page - IXYS Corporation |
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IXFN64N60P Datenblatt(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXFN 64N60P Fig. 7. Input Admittance 0 10 20 30 40 50 60 70 80 90 100 3.54 4.555.5 6 6.5 7 VGS - Volts TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1020 3040 50 60 70 8090 100 ID - Amperes TJ = - 40ºC 25ºC 125ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 20 40 60 80 100 120 140 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs VDS = 300V I D = 32A I G = 10mA Fig. 11. Capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 1 10 100 1,000 10 100 1000 VDS - Volts TJ = 150ºC TC = 25ºC 25µs 1ms 100µs RDS(on) Limit 10ms DC |
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