IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN30N120P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

13

22

S

R

Gi

Gate input resistance

1.70

Ω

C

iss

19

nF

C

oss

V

GS

= 0V, V

960

pF

C

rss

25

pF

t

d(on)

Resistive Switching Times

57

ns

t

r

V

60

ns

t

d(off)

R

G

= 1

Ω (External)

95

ns

t

f

56

ns

Q

g(on)

310

nC

Q

gs

V

104

nC

Q

gd

137

nC

R

thJC

0.14

°C/W

R

thCS

0.05

°C/W

Source-Drain Diode

Characteristic Values

T

Min.

Typ.

Max.

I

S

V

30

A

I

SM

Repetitive, pulse width limited by T

JM

120

A

V

SD

I

1.5

V

t

rr

300 ns

Q

RM

1.6

μC

I

RM

14

A

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

I

V

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