| Datenblatt-Suchmaschine für elektronische Bauteile |
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IXFN38N100P Datenblatt(PDF) 4 Page - IXYS Corporation |
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IXFN38N100P Datenblatt(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN38N100P Fig. 7. Input Admittance 0 10 20 30 40 50 60 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 VGS - Volts TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 10 203040 506070 80 90 ID - Amperes TJ = - 40ºC 125ºC 25ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 10 20 30 40 50 60 70 80 90 100 110 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 500 QG - NanoCoulombs VDS = 500V I D = 19A I G = 10mA Fig. 11. Capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 0.1 1.0 10.0 100.0 1,000.0 10 100 1,000 VDS - Volts TJ = 150ºC TC = 25ºC Single Pulse 1ms 100µs RDS(on) Limit 10ms DC 100ms 25µs |
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