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BFS481 Datenblatt(PDF) 2 Page - Infineon Technologies AG

Teilenummer BFS481
Bauteilbeschribung  NPN Silicon RF Transistor
PDF  6 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFS481 Datenblatt(HTML) 2 Page - Infineon Technologies AG

  BFS481 Datasheet HTML 1Page - Infineon Technologies AG BFS481 Datasheet HTML 2Page - Infineon Technologies AG BFS481 Datasheet HTML 3Page - Infineon Technologies AG BFS481 Datasheet HTML 4Page - Infineon Technologies AG BFS481 Datasheet HTML 5Page - Infineon Technologies AG BFS481 Datasheet HTML 6Page - Infineon Technologies AG  
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2007-04-26
BFS481
2
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
20
mA
Base current
IB
2
Total power dissipation1)
TS ≤ 83 °C
Ptot
175
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
≤ 380
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO
12
-
-
V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
ICES
-
-
100
µA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICBO
-
-
100
nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO
-
-
1
µA
DC current gain-
IC = 5 mA, VCE = 8 V, pulse measured
hFE
70
100
140
-
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance



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