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BGA735N16 Datenblatt(PDF) 9 Page - Infineon Technologies AG

Teilenummer BGA735N16
Bauteilbeschribung  High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz)
PDF  33 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BGA735N16 Datenblatt(HTML) 9 Page - Infineon Technologies AG

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BGA735N16
High Linearity Tri-Band LTE/UMTS LNA
Electrical Characteristics
Data Sheet
9
Revision 3.8, 2010-12-23
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Thermal Resistance
2.3
ESD Integrity
Table 1
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Supply voltage
V
CC
-0.3
3.6
V
Supply current
I
CC
––10
mA
Pin voltage
V
PIN
-0.3
V
CC+0.3 V
All pins except RF input pins.
Pin voltage RF Input Pins
V
RFIN
-0.3
0.9
V
RF input power
P
RFIN
––4dBm
Junction temperature
T
j
––150
°C
Ambient temperature range
T
A
-30
85
°C
Storage temperature range
T
stg
-65
150
°C
Table 2
Thermal Resistance
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Thermal resistance junction to
soldering point
R
thJS
––
≤ 37
K/W
Table 3
ESD Integrity
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
ESD hardness HBM1)
1) According to JESD22-A114
V
ESD-HBM
2000
V
All pins



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