2SA673 datasheet(1/2 Pages) SECOS

Teilenummer	2SA673

Bauteilbeschribung	General Purpose Transistor

PDF	2 Pages

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Hersteller	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 2 page

Elektronische Bauelemente

2SA673, 2SA673A

PNP

General Purpose Transistor

21-Jan-2011 Rev. C

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

C

E

K

F

D

B

G

H

J

3

Base

1

Emitter

Collector

2

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

Low frequency amplifier

Complementary pair with 2SC1213 and 2SC1213A

CLASSIFICATION OF hFE(1)

Product-Rank

2SA673-B

2SA673-C

2SA673-D

Product-Rank

2SA673A-B

2SA673A-C

2SA673A-D

Range

60~120

100~200

160~320

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

2SA673

-35

Collector to Base Voltage

2SA673A

VCBO

-50

V

2SA673

-35

Collector to Emitter Voltage

2SA673A

VCEO

-50

V

Emitter to Base Voltage

VEBO

-4

V

Continuous Collector Current

IC

-500

mA

Collector Power Dissipation

PC

400

mW

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

2SA673

-35

-

Collector to Base Breakdown

Voltage

2SA673A

V(BR)CBO

-50

-

V

IC= -10µA, IE=0

2SA673

-35

-

Collector to Emitter

Breakdown Voltage

2SA673A

V(BR)CEO

-50

-

V

IC= -1mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

-4

-

V

IE= -10µA, IC=0

Collector Cut - Off Current

ICBO

-

-0.5

µ

A

VCB= -20V, IE=0

hFE (1)

60

-

320

VCE= -3V, IC=- 10mA

DC Current Gain

hFE (2) *

10

-

VCE= -3V, IC= -500mA

Collector to Emitter Saturation Voltage

VCE(sat) *

-

-0.6

V

IC = -150mA, IB= -15mA

Collector to Emitter Voltage

VBE

-

-0.64

-

V

VCE= -3V, IC= -10mA

* Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%.

TO-92

Millimeter

REF.

Min.

Max.

A

4.40

4.70

B

4.30

4.70

C

12.70

-

D

3.30

3.81

E

0.36

0.56

F

0.36

0.51

G

1.27 TYP.

H

1.10

-

J

2.42

2.66

K

0.36

0.76

1

1Emitter

2

2Collector

3

3Base

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