BCP882 datasheet(1/2 Pages) SECOS

Teilenummer	BCP882

Bauteilbeschribung	Epitaxial Planar Transistor

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Hersteller	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Any changing of specification will not be informed individual

BCP882

NPN Silicon

Epitaxial Planar Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

SOT-89

Absolute Maximum Ratings at TA=25 C

o

01-Jun-2002 Rev. A

Page 1 of 2

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Description

The BCP882 is suited for the output stage of 1.5W

audio, voltage regulator, and relay driver.

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Parameter

Symbol

Min

Typ.

Max

Uni

Test Conditions

Collector-Base Breakdown Voltage

BVCBO

-

V

IC=100

VEB=3V

µA,IE=0

IC= 1mA,IB=0

IE= 10µA

VCB= 30V

IC=

VCE= V, IC=

VCE= V, IC= 0.1A,f=100MHz

VCB=10 , f=1MHz,IE=0

BVCEO

30

-

V

BVEBO

-

V

ICBO

-

1

uA

-

VCE(sat)

-

hFE1

fT

-

MH

Cob

-

pF

z

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector Saturation Voltage

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

t

40

5

0.5

1

V

2A,IB=0.2A

2

1 A

5

V

C

100

-

90

500

45

-

o

IEBO

Emitter-Base Cutoff Current

-

uA

Classification of hFE

Rank

Q

P

100~200

160~320

Range

E

250~500

IC=

VBE(sat)

-

Base-Emitter Saturation Voltage

30

2

V

2A,IB=0.2A

hFE2

-

VCE= V, IC=

2

20mA

Symbol

Parameter

Value

Collector Current

5

1.2

55~+150

30

40

3

IC

Tstg

TJ,

Junction and

Total Power Dissipation

VEBO

PD

Emitter-Base Voltage

V

A

W

Storage Temperature

-

C

O

VCEO

Collector-Emitter Voltage

V

VCBO

Collector-Base Voltage

V

Units

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