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MMBT3906T Datenblatt(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Teilenummer MMBT3906T
Bauteilbeschribung  General Purpose Transistors
PDF  5 Pages
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Hersteller  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMBT3906T Datenblatt(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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MMBT3906T
PNP Silicon
General Purpose Transistors
Elektronische Bauelemente
12-Apr-2010 Rev. A
Page 2 of 5
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN.
MAX.
UNIT
TEST CONDITIONS
Off Characteristics
Collector-Emitter Breakdown Voltage
(3)
V(BR)CEO
-40
-
Vdc
IC = -1.0 mAdc, IB = 0
Collector-Base Breakdown Voltage
V(BR)CBO
-40
-
Vdc
IC = -10 µAdc, IE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
-
Vdc
IE = -10 µAdc, IC = 0
Collector Cut-Off Current
IBL
-
-50
nAdc VCE = -30 Vdc, VEB = -3.0 Vdc
Emitter Cut-Off Current
ICEX
-
-50
nAdc VCE = -30 Vdc, VBE = -3.0 Vdc
On Characteristics
(3)
DC Current Gain
(1)
hFE
60
-
-
IC = -0.1 mAdc, VCE = -1.0 Vdc
80
-
IC = -1.0 mAdc, VCE = -1.0 Vdc
100
300
IC = -10 mAdc, VCE = -1.0 Vdc
60
-
IC = -50 mAdc, VCE = -1.0 Vdc
30
-
IC = -100 mAdc, VCE = -1.0 Vdc
Collector-Emitter Saturation Voltage
(3)
VCE(sat)
-
-0.25
Vdc
IC = -10 mAdc, IB = -1.0 mAdc
--0.4
IC = -50 mAdc, IB = -5.0 mAdc
Base-Emitter Saturation Voltage
(3)
VBE(sat)
-0.65
-0.85
Vdc
IC = -10 mAdc, IB = -1.0 mAdc
-
-0.95
IC = -50 mAdc, IB = -5.0 mAdc
Small-Signal Characteristics
Curren-Gain-Bandwidth Product
fT
250
-
MHz
VCE = -20 Vdc, IC = -10 mAdc,
f = 100 MHz
Output Capacitance
Cobo
-4.5
pF
VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz
Input Capacitance
Cibo
-10
pF
VBE = -0.5 Vdc, IE = 0, f = 1.0 MHz
Input Impedancen
hie
2.0
12
pF
VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0
kHz
Voltage Feedback Ratio
hre
0.1
10
X10
-4
VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0
kHz
Small-Signal Current Gain
hfe
100
400
-
VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0
kHz
Output Admittance
*hoe
3.0
60
µmhos VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0
kHz
Noise Figure
NF
-
4.0
dB
VCE = -5.0 Vdc, IC = -100 µAdc,
RS = 1.0k f = 1.0 kHz
Switching Characteristics
Delay Time
Td
-
35
nS
VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10
mAdc, IB1 = -1.0 mAdc
Rise Time
Tr
-
35
nS
Storage Time
TS
-
225
nS
VCC = -3.0 Vdc, IC = -10 mAdc,
IB1 = IB2 = -1.0 mAdc
Fall Time
TF
-
75
nS
3.
Pulse Test：Pulse Width ≦ 300 μs, Duty Cycle≦ 2.0%.



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