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MMBTA13 Datenblatt(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Teilenummer MMBTA13
Bauteilbeschribung  Darlington Amplifier Transistor NPN Silicon
PDF  3 Pages
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Hersteller  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMBTA13 Datenblatt(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 2. Noise Current
f, FREQUENCY (Hz)
Figure 3. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (kΩ)
Figure 4. Wideband Noise Figure
RS, SOURCE RESISTANCE (kΩ)
5.0
50
70
100
200
30
10
20
1.0
10
10
20
50 100 200 500 1k 2k
5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS ≈ 0
IC = 1.0 mA
100 µA
10 µA
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 µA
10 µA
2.0
5.0
10
20
50
100 200
500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10 µA
100 µA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0
2.0
5.0
10
20
50 100
200
500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 µA
100 µA
IC = 1.0 mA
10 20
50 100 200 500 1k 2k
5k 10k 20k 50k 100k
Figure 5. Thermal Response
t, TIME (ms)
1.0
2.0
5.0
1.0
0.5
0.2
0.1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0k
2.0k
5.0k 10k
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t)
01-Jun-2004 Rev. B
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