IRF430 datasheet(1/2 Pages) SEME-LAB

Teilenummer	IRF430

Bauteilbeschribung	N-CHANNEL POWER MOSFET

PDF	2 Pages

Scroll/Zoom	100%

Hersteller	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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IRF430

Prelim. 6/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

40.01 (1.575)

Max.

4.47 (0.176)

Rad.

2 Pls.

22.23 (0.875)

Max.

11.43 (0.450)

6.35 (0.250)

12.19 (0.48)

11.18 (0.44)

1.63 (0.064)

1.52 (0.060)

1.09 (0.043)

0.97 (0.038)

Dia.

30.40 (1.197)

29.90 (1.177)

16.97 (0.668)

16.87 (0.664)

4.09 (0.161)

3.84 (0.151)

2 Pls

11.18 (0.440)

10.67 (0.420)

26.67

(1.050)

Max.

2

1

VGS

Gate – Source Voltage

ID

Continuous Drain Current

(VGS = 0 , Tcase = 25°C)

ID

Continuous Drain Current

(VGS = 0 , Tcase = 100°C)

IDM

Pulsed Drain Current 1

PD

Power Dissipation @ Tcase = 25°C

Linear Derating Factor

EAS

Single Pulse Avalanche Energy 2

IAR

Avalanche Current 2

dv/dt

Peak Diode Recovery 3

TJ , Tstg

Operating and Storage Temperature Range

TL

Lead Temperature

1.6mm (0.63”) from case for 10 sec.

±20V

4.5A

3A

18A

75W

0.6W/°C

1.1mJ

4.5A

3.5V/ns

-55 to +150°C

300°C

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

FEATURES

• HERMETICALLY SEALED TO–3 METAL

PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

TO–3 Metal Package

Pin 1 – Gate

Pin 2 – Source

Case – Drain

Notes

1) Pulse Test: Pulse Width

£ 300ms, d£ 2%

2) @ VDD = 50V , L ³ 100mH , RG = 25W , Peak IL = 4.5A , Starting TJ = 25°C

3) @ ISD £ 4.5A , di/dt £ 75A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 7.5W

VDSS

500V

ID(cont)

4.5A

RDS(on)

1.5

W

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