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IRFN250SMD Datenblatt(PDF) 2 Page - Seme LAB

Teilenummer IRFN250SMD
Bauteilbeschribung  N-CHANNEL POWER MOSFET
PDF  2 Pages
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Hersteller  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

IRFN250SMD Datenblatt(HTML) 2 Page - Seme LAB

  IRFN250SMD Datasheet HTML 1Page - Seme LAB IRFN250SMD Datasheet HTML 2Page - Seme LAB  
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IRFN250SMD
Prelim. 7/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 14A
VGS = 10V
ID = 22A
VDS = VGS
ID = 250mA
VDS ³ 15V
IDS = 14A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 22A
VDS = 0.5BVDSS
ID = 22A
VDS = 0.5BVDSS
VDD = 100V
ID = 22A
RG = 2.35W
IS = 22A
TJ = 25°C
VGS = 0
IF = 22A
TJ = 25°C
di / dt £ 100A/msVDD £ 50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
200
0.29
0.100
0.105
24
9
25
250
100
–100
3500
700
110
55
115
822
30
60
35
190
170
130
22
88
1.9
950
9.0
Negligible
0.8
2.8
V
V/°C
W
V
S(
W
mA
nA
pF
nC
nC
ns
A
V
ns
mC
nH
BVDSS
DBVDSS
DTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
£ 300ms, d£ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS



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