SSG4410 datasheet(2/5 Pages) SECOS

2 / 5 page

Elektronische Bauelemente

SSG4410

10 A, 30V, RDS(ON) 13.5 m

N-Ch Enhancement Mode Power MOSFET

23-Dec-2010 Rev. B

Page 2 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID =250uA

Breakdown Voltage

Temperature Coefficient

△

BVDSS / △TJ

0.037

V / °C Reference to 25°C, ID=1mA

Gate Threshold Voltage

VGS(th)

1.0

3.0

VDS=VGS, ID =250uA

Forward Transconductance

gfs

VDS=15V, ID =10A

Gate-Source Leakage Current

IGSS

±100

VGS=±20V

Drain-Source Leakage

Current(TJ=25°C)

μA

VDS=30V, VGS=0V

Drain-Source Leakage

Current(TJ=55°C)

IDSS

μA

VDS=24V, VGS=0V

11.5

13.5

VGS=10V, ID=10A

Static Drain-Source On-Resistance

RDS(ON)

16.5

mΩ

VGS=4.5V, ID=5A

Total Gate Charge

Gate-Source Chagre

Qgs

Gate-Drain (“Miller”) Change

Qgd

VDS=15V, ID =10A, VGS=5V

Turn-on Delay Time

Td(ON)

7.5

Rise Time

10.2

Turn-off Delay Time

Td(OFF)

Fall Time

VDS=25V, VGS=5V

I D=1A, RD=25Ω, RG=3.3Ω

Input Capacitance

CISS

955

Output Capacitance

COSS

555

Reverse Transfer Capacitance

CRSS

204

VDS=15V

VGS=0V

f=1.0MHz

Source-Drain Diode

Forward On Voltage

VSD

1.3

IS=2.3A, VGS= 0V, TJ=25°C

Continuous Source

Current (Body Diode)

2.3

VD = VG = 0V, VS= 1.3V

Pulsed Source

Current (Body Diode)

ISM

Notes:

Pulse width limited by safe operating area.

Pulse width

300 μs, duty cycle

≦≦ ％

SSG4410 Datenblatt(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSG4410 Datenblatt(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4 5

Datenblatt Download

Link URL