STT3981 datasheet(2/5 Pages) SECOS

2 / 5 page

Elektronische Bauelemente

STT3981

-1.6 A, -20 V, RDS(ON) 180 m

P-Channel Enhancement Mode Mos.FET

010-Feb-2010 Rev. C

Page 2 of 5

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

-20

VGS = 0, ID=250 uA

Gate Threshold Voltage

VGS(th)

-0.4

-1.1

VDS = VGS, ID=250 uA

Gate Leakage Current

IGSS

±100

VGS = ±8 V

Drain-Source Leakage Current (Tj=25℃)

-1

VDS = -20 V, VGS = 0

Drain-Source Leakage Current (Tj=70℃)

IDSS

-20

VDS = -16 V, VGS = 0

100 150

VGS = -4.5 V, ID = -1.9 A

160 210

VGS = -2.5 V, ID = -1.6 A

Drain-Source On-Resistance

RDS(ON)

260 300

mΩ

VGS = -1.8 V, ID = -0.7 A

Forward Transconductance

gfs

VDS = -5V, ID = -1.9A

Diode Forward Voltage

VSD

-0.84 -1.1

IS = -1.0A, VGS = 0V

Dynamic

Total Gate Charge

7.5

Gate-Source Charge

Qgs

0.52

Gate-Drain (“Miller”) Charge

Qgd

1.02

ID = -1.9 A

VDS = -10 V

VGS = -4.5 V

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Time

Td(off)

168 180

Fall Time

VDS = -10 V

ID = -1 A

VGEN = -4.5 V

RG = 6 Ω

RL = 10 Ω

Input Capacitance

Ciss

450

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VGS = 0 V

VDS = -15 V

f = 1.0 MHz

Notes:

1. Pulse width limited by maximum junction temperature.

2. Pulse width≦300us, duty cycle≦2%.

3. Surface mounted on 1 in

2 copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad.

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