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MMBT4401 Datenblatt(PDF) 5 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT4401 Datenblatt(HTML) 5 Page - SeCoS Halbleitertechnologie GmbH |
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5 / 5 page ![]() Any changing of specification will not be informed individual MMBT4401 NPN Silicon Switching Transistor STATIC CHARACTERISTICS Figure 15. DC Current Gain Figure 16. Collector Saturation Region 0.4 0.6 0.8 1.0 0.2 0.1 0.5 2.0 3.0 50 0.2 0.3 0 1.0 0.7 5.0 7.0 IC = 1.0 mA TJ = 25°C 0.07 0.05 0.03 0.02 0.01 10 mA 100 mA 10 20 30 500 mA 0.3 0.5 0.7 1.0 3.0 0.1 0.5 2.0 3.0 10 50 70 0.2 0.3 0.2 100 1.0 0.7 500 30 20 5.0 7.0 TJ = 125°C –55 °C 2.0 200 300 25 °C VCE = 1.0 V VCE = 10 V Figure 17. “On” Voltages 0.4 0.6 0.8 1.0 0.2 Figure 18. Temperature Coefficients 1.0 2.0 5.0 10 20 50 0 100 – 0.5 0 + 0.5 – 1.0 – 1.5 – 2.0 500 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = 10 V qVC for VCE(sat) qVB for VBE 200 0.1 0.2 0.5 – 2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5 IC, Collector Current (mA) IB, Base Current (mA) IC, Collector Current (mA) IC, Collector Current (mA) http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2004 Rev. B Page 5 of 5 |
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