SMN03T80IS datasheet(1/8 Pages) KODENSHI

Teilenummer	SMN03T80IS

Bauteilbeschribung	SWITCHING REGULATOR APPLICATION

PDF	8 Pages

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Hersteller	KODENSHI [KODENSHI_AUK CORP.]

Direct Link	http://www.kodenshi.co.kr

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1 / 8 page

Rev. date: 16-AUG-11

KSD-T6Q010-000

www.auk.co.kr

1 of 8

SMN03T80IS

Advanced N-Ch Power MOSFET

SWITCHING REGULATOR APPLICATION

Features

 BVDSS=800V Min.

 Low gate charge: Qg=19nC (Typ.)

 Low drain-source On resistance: RDS(on)=4.2Ω (Max.)

 RoHS compliant device

 100% avalanche tested

Ordering Information

Part Number

Marking

Package

SMN03T80IS

SMN03T80

I-PAK

(Short Lead)

Marking Information

Absolute maximum ratings (T

C=25C unless otherwise noted)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

VDSS

800

V

Gate-source voltage

VGSS

30

V

Drain current (DC)

*

ID

Tc=25C

3

A

Tc=100C

1.83

A

Drain current (Pulsed)

*

IDM

12

A

Single pulsed avalanche energy

(Note 2)

EAS

200

mJ

Repetitive avalanche current

(Note 1)

IAR

3

A

Repetitive avalanche energy

(Note 1)

EAR

7

mJ

Power dissipation

PD

70

W

Peak diode recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Junction temperature

TJ

150

C

Storage temperature range

Tstg

-55~150

C

* Limited only maximum junction temperature

Column 1, 2: Device Code

Column 3: Production Information

e.g.) YWW

-. YWW: Date Code (year, week)

SMN

03T80

YWW

I-PAK

G D S

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