BSP52T3G datasheet(2/3 Pages) ONSEMI

Teilenummer	BSP52T3G

Bauteilbeschribung	NPN Small-Signal Darlington Transistor

PDF	3 Pages

Scroll/Zoom	100%

Hersteller	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

−

Vdc

Emitter-Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector-Emitter Cutoff Current

(VCE = 80 Vdc, VBE = 0)

ICES

−

mAdc

Emitter-Base Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

−

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

hFE

1000

2000

−

Collector-Emitter Saturation Voltage

(IC = 500 mAdc, IB = 0.5 mAdc)

VCE(sat)

−

1.3

Vdc

Base-Emitter Saturation Voltage

(IC = 500 mAdc, IB = 0.5 mAdc)

VBE(sat)

−

1.9

Vdc

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%

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