60

mA

A

V

˚C

˚C

260

˚C

(Ta=25˚C)

(Ta=25 ˚C)

(2.54)

1

2

-

V

-

2.2

V

-

-

10

µ A

-

mW/sr

--

nm

∆λ

--

nm

--

-

-

˚

φ 3.8

2 - 0.5

+ 0.15

- 0.1

Features

Applications

Absolute Maximum Ratings

Outline Dimensions

(Unit : mm)

Parameter

Symbol

Rating

Unit

Forward current

Peak forward current

Reverse voltage

Operating temperature

Storage temperature

Soldering temperature

*3

the lens portion into 1 sr or all those emitted from the light emitting diode.

Parameter

Peak forward voltage

Forward voltage

Reverse voltage

Peak emission wavelength

Half intensity wavelength

Half intensity angle

Response frequency

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

-25 to + 85

- 40 to + 85

GL382

GL382

IrDA-Based SIR System-Conforming

Infrared Emitting Diode

0.5

4

*2 For 3 seconds at the position of 2.6 mm from the resin edge

*1 Pulse width <= 100

µ s, Duty ratio=0.01

= 50mA

= 50mA

6

12

±17

MHz

*2

*1

1. Compact 3

φ resin mold package

2. Peak emitting wavelength conforming to SIR system based on IrDA

(

λ p=880 nm [I

F

=50mA])

3. Narrow beam angle

(Half intensity angle : TYP. ± 17˚ )

4. High speed response

(Cut-off frequency fc : TYP.12MHz)

1. Portable information terminal equipment

2. Personal computers

3. Printers

1.5

18

880

40

1.7

3.8

Electro-optical Characteristics

2

2 Cathode

1

1 Anode

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

s

s

s

s

s

* Tolerance : ± 0.2mm

∆θ