© Semiconductor Components Industries, LLC, 2007

April, 2007 − Rev. 3

1

Publication Order Number:

MPS650/D

NPN − MPS650, MPS651;

PNP − MPS750, MPS751

MPS651 and MPS751 are Preferred Devices

Amplifier Transistors

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

MPS650; MPS750

MPS651; MPS751

40

60

Vdc

Collector − Base Voltage

MPS650; MPS750

MPS651; MPS751

60

80

Vdc

Emitter − Base Voltage

5.0

Vdc

Collector Current − Continuous

2.0

Adc

Derate above 25

°C

625

5.0

mW

mW/

°C

Derate above 25

°C

1.5

12

W

mW/

°C

Operating and Storage Junction

Temperature Range

−55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

200

°C/W

Thermal Resistance, Junction−to−Case

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

Preferred devices are recommended choices for future use

and best overall value.

COLLECTOR

3

2

BASE

1

EMITTER

COLLECTOR

3

2

BASE

1

EMITTER

NPN

PNP

1 2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

MARKING DIAGRAM

MPS

xxx

AYWW

G

G

xxx

= 650, 750, 651, or 751

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)