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MP6K14 Datenblatt(PDF) 2 Page - Rohm

Teilenummer MP6K14
Bauteilbeschribung  4V Drive Nch Nch MOSFET
PDF  7 Pages
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Hersteller  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

MP6K14 Datenblatt(HTML) 2 Page - Rohm

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Data Sheet
MP6K14
　
Electrical characteristics (Ta = 25
C)
<It is the same ratings for Tr1 and Tr2.>
Symbol
Min.
Typ.
Max.
Unit
Gatesource leakage
IGSS

10
AVGS=20V, VDS=0V
Drainsource breakdown voltage V (BR)DSS
30

VID=1mA, VGS=0V
Zero gate voltage drain current
IDSS

1
AVDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
2.5
V
VDS=10V, ID=1mA
18
25
ID=8.0A, VGS=10V
21
29
ID=8.0A, VGS=4.5V
23
32
ID=8.0A, VGS=4.0V
Forward transfer admittance
l Yfs l
4.5

SID=8.0A, VDS=10V
Input capacitance
Ciss
470
pF
VDS=10V
Output capacitance
Coss
170
pF
VGS=0V
Reverse transfer capacitance
Crss
80
pF
f=1MHz
Turnon delay time
td(on)
8
ns
ID=4.0A, VDD 15V
Rise time
tr
30
ns
VGS=10V
Turnoff delay time
td(off)
39
ns
RL=3.75
Fall time
tf
9
ns
RG=10
Total gate charge
Qg
7.3
nC ID=8.0A, VDD 15V
Gatesource charge
Qgs
1.5
nC VGS=5V
Gatedrain charge
Qgd
2.9
nC
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25
C)
<It is the same ratings for Tr1 and Tr2.>
Symbol
Min.
Typ.
Max. Unit
Forward Voltage
VSD

1.2
V
Is=8.0A, VGS=0V
*Pulsed
Conditions
Conditions
m
Parameter
Parameter
Static drainsource onstate
resistance
RDS (on)*
*
*
*
*
*
*
*
*
*
2/6
2011.03 - Rev.A



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