RN779F

Diodes

1/2

PIN diode

RN779F

Applications

External dimensions (Unit : mm)

Land size figure (Unit : mm)

For AGC, Switching.

Features

1) Small mold type. (UMD3)

2) High-frequency resistance witch is small

and low capacity.

Construction

Structure

UMD3

0.8MIN.

0.65

1.3

ROHM : UMD3

JEITA : SC-70

JEDEC : SOT-323

dot (year week factory)

2.0±0.2

0.3±0.1

各リードとも

同寸法

(3)

1.3±0.1

（0.65）

（0.65）

(2)

(1)

0.15±0.05

0.9±0.1

0.7±0.1

0～0.1

Each lead has same dimension

Silicon epitaxial planar

Taping dimensions (Unit : mm)

4.0±0.1

4.0±0.1

2.0±0.05

φ1.55±0.05

φ0.5±0.05

2.25±0.1

　　　　 0

1.25±0.1

0.3±0.1

Absolute maximum ratings (Ta=25

°C)

Symbol

Unit

V

mA

Tj

℃

Tstg

℃

Limits

50

50

Parameter

Reverse voltage (DC)

orward current (DC)

ion temperature

torage temperature

150

-55 to +150

F

Junct

S

Electrical characteristics (Ta=25

°C)

Symbol

Min.

Typ.

Max.

Unit

--

1

V

--

0.1

µA

Ct

-

-

0.9

pF

Rf

-

-

7

Ω

Conditions

Capacitance between terminals

gh frequency resistance

everse current

Parameter

ward voltage

R

Hi

For