ST1S30 datasheet(7/11 Pages) STMICROELECTRONICS

7 / 11 page

ST1S30

Electrical characteristics

Doc ID 17927 Rev 1

7/11

Refer to Figure 4 application circuit VIN_SW = VIN_A = VINH = 5 V, VO = 1.2 V, C1 = 10 µF, C2

= 22, C3 = 1 µF, L1 = 2.2 µH, TJ = -25 to 125 °C (unless otherwise specified. Typical values

are referred to 25 °C)

Table 7.

Electrical characteristics for ST1S30I

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Feedback voltage

784

800

816

IFB

VFB pin bias current

600

Minimum input voltage

IO = 10 mA to 2 A

2.7

OVP

Overvoltage protection

threshold

VO rising

1.05 VO 1.1 VO

Overvoltage protection

hysteresis

VO falling

Quiescent current

VINH > 1.2 V, not switching

1.5

2.5

VINH < 0.0 V, T = - 30 °C to 85 °C

µA

Output current

VI = 2.7 to 5.5 V

(1)

VINH

Inhibit threshold

Device ON, VI = 2.7 to 5.5 V

1.3

Device ON, VI = 2.7 to 5 V

1.2

Device OFF

0.4

IINH

Inhibit pin current

2µA

%VO/ΔVI

Output line regulation

VI = 2.7 V to 5.5 V, IO = 100 mA

(1)

0.16

%VO/

ΔV

%VO/ΔIO

Output load regulation

IO = 10 mA to 2 A

(1)

0.2

0.6

%VO/

ΔI

PWMfS

PWM switching frequency

VFB = 0.65 V

1.2

1.5

1.8

MHz

DMAX

Maximum duty cycle

RDSON-N NMOS switch on resistance

ISW = 750 mA

0.1

RDSON-P PMOS switch on resistance

ISW = 750 mA

0.1

ISWL

Switching current limitation

(1)

3.7

4.4

5.1

Efficiency (1)

IO = 10 mA to 100 mA, VO = 3.3 V

IO = 100 mA to 3 A, VO = 3.3 V

TSHDN

Thermal shutdown

150

°C

THYS

Thermal shutdown hysteresis

°C

%VO/ΔIO

Load transient response

IO = 100 mA to 1 A, TA = 25 °C

tR = tF ≥ 200 ns

(1)

-10

+10

%VO

%VO/ΔIO

Short circuit removal response

IO = 10 mA to IO = short,

TA = 25 °C

(1)

-10

+10

%VO

Guaranteed by design, but not tested in production.

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