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FS2AS-14A Datenblatt(PDF) 3 Page - Mitsubishi Electric Semiconductor

Teilenummer FS2AS-14A
Bauteilbeschribung  HIGH-SPEED SWITCHING USE
PDF  4 Pages
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Hersteller  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FS2AS-14A Datenblatt(HTML) 3 Page - Mitsubishi Electric Semiconductor

  FS2AS-14A Datasheet HTML 1Page - Mitsubishi Electric Semiconductor FS2AS-14A Datasheet HTML 2Page - Mitsubishi Electric Semiconductor FS2AS-14A Datasheet HTML 3Page - Mitsubishi Electric Semiconductor FS2AS-14A Datasheet HTML 4Page - Mitsubishi Electric Semiconductor  
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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2AS-14A
HIGH-SPEED SWITCHING USE
0
10
20
30
40
50
0
4
8
12
16
20
ID = 3A
TC = 25°C
Pulse Test
2A
1A
0
4
8
12
16
20
10–1 2100
35 7
2
101
35 7
2
102
35 7
VGS = 10V
TC = 25°C
Pulse Test
20V
0
1
2
3
4
5
0
4
8
12
16
20
TC = 25°C
VDS = 50V
Pulse Test
10–1
100
23
5 7
101
23
5 7
10–1
100
2
3
5
7
101
2
3
5
7
TC = 25°C
75°C
125°C
VDS = 10V
Pulse Test
100
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
2100
35 7
2
101
35 7
2
102
35 7
2
Ciss
Coss
Crss
Tch = 25°C
f = 1MHZ
VGS = 0V
100
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
10–1
100
23 4 5 7
101
23 4 5 7
td(off)
td(on)
tr
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50
Ω
tf
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)



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